Spectroscopic ellipsometry study
نویسنده
چکیده
The dielectric functions of InP, IIla.53 Gao.47 As, and 1110.75 Gao.2S Aso.s P 0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical-vapor deposition grown 111o.s3 Gllo.47 As/lnP and lIla. 75 Gao.25 ASO.5 P 0.5 IInP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types ofheterojunctions: In 1•x Gax ASy/lnP and InP/In,.xGaxAsyP,.y' The sharpest interface is obtained for InP growth on lIla.75 Gllo.25 ASO.5 po. 5 where the interface region is estimated to be (10 ± 10) A thick. The importance of performing in situ SE measurements is emphasized.
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